Static Noise Margin Analysis of Sub-threshold SRAM Cells in Deep Sub-micron Technology

Armin Wellig, Julien Zory. Static Noise Margin Analysis of Sub-threshold SRAM Cells in Deep Sub-micron Technology. In Vassilis Paliouras, Johan Vounckx, Diederik Verkest, editors, Integrated Circuit and System Design, Power and Timing Modeling, Optimization and Simulation, 15th International Workshop, PATMOS 2005, Leuven, Belgium, September 21-23, 2005, Proceedings. Volume 3728 of Lecture Notes in Computer Science, pages 488-497, Springer, 2005. [doi]

Abstract

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