Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages - researchr publication authors

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Jianan Wen, Andrea Baroni, Eduardo Perez, Markus Ulbricht 0002, Christian Wenger, Milos Krstic. Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages. In Luca Cassano, Sreejit Chakravarty, Alberto Bosio, editors, IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2022, Austin, TX, USA, October 19-21, 2022. pages 1-6, IEEE, 2022. [doi]

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