Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages

Jianan Wen, Andrea Baroni, Eduardo Perez, Markus Ulbricht 0002, Christian Wenger, Milos Krstic. Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages. In Luca Cassano, Sreejit Chakravarty, Alberto Bosio, editors, IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2022, Austin, TX, USA, October 19-21, 2022. pages 1-6, IEEE, 2022. [doi]

@inproceedings{WenBPUWK22,
  title = {Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages},
  author = {Jianan Wen and Andrea Baroni and Eduardo Perez and Markus Ulbricht 0002 and Christian Wenger and Milos Krstic},
  year = {2022},
  doi = {10.1109/DFT56152.2022.9962345},
  url = {https://doi.org/10.1109/DFT56152.2022.9962345},
  researchr = {https://researchr.org/publication/WenBPUWK22},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2022, Austin, TX, USA, October 19-21, 2022},
  editor = {Luca Cassano and Sreejit Chakravarty and Alberto Bosio},
  publisher = {IEEE},
  isbn = {978-1-6654-5938-9},
}