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U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming-Hung Wu, Ming-Chun Hong, Ching Shih, Yao-Jen Chang, Yu-Chen Hsin, Shih-Ching Chiu, Kuan-Ming Chen, Yi-Hui Su, Chih-Yao Wang, Shan-Yi Yang, Guan-Long Chen, Hsin-Han Lee, Sk. Ziaur Rahaman, I-Jung Wang, Chen-Yi Shih, Tsun-Chun Chang, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou. U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

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