Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Jie Wu, Patrick Juliano, Elyse Rosenbaum. Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions. Microelectronics Reliability, 41(11):1771-1779, 2001. [doi]

@article{WuJR01,
  title = {Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions},
  author = {Jie Wu and Patrick Juliano and Elyse Rosenbaum},
  year = {2001},
  doi = {10.1016/S0026-2714(01)00033-6},
  url = {http://dx.doi.org/10.1016/S0026-2714(01)00033-6},
  researchr = {https://researchr.org/publication/WuJR01},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {41},
  number = {11},
  pages = {1771-1779},
}