Po-Hsun Wu, Mark Po-Hung Lin, Xin Li, Tsung-Yi Ho. Common-Centroid FinFET Placement Considering the Impact of Gate Misalignment. In Azadeh Davoodi, Evangeline Young, editors, Proceedings of the 2015 Symposium on International Symposium on Physical Design, ISPD 2015, Monterey, CA, USA, March 29 - April 01, 2015. pages 25-31, ACM, 2015. [doi]
@inproceedings{WuLLH15,
title = {Common-Centroid FinFET Placement Considering the Impact of Gate Misalignment},
author = {Po-Hsun Wu and Mark Po-Hung Lin and Xin Li and Tsung-Yi Ho},
year = {2015},
doi = {10.1145/2717764.2717769},
url = {http://doi.acm.org/10.1145/2717764.2717769},
researchr = {https://researchr.org/publication/WuLLH15},
cites = {0},
citedby = {0},
pages = {25-31},
booktitle = {Proceedings of the 2015 Symposium on International Symposium on Physical Design, ISPD 2015, Monterey, CA, USA, March 29 - April 01, 2015},
editor = {Azadeh Davoodi and Evangeline Young},
publisher = {ACM},
isbn = {978-1-4503-3399-3},
}