The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide

Hong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi. The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide. Microelectronics Reliability, 48(11-12):1804-1808, 2008. [doi]

Authors

Hong Wu

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Weifeng Sun

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Yangbo Yi

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Haisong Li

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Longxing Shi

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