The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide

Hong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi. The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide. Microelectronics Reliability, 48(11-12):1804-1808, 2008. [doi]

Possibly Related Publications

The following publications are possibly variants of this publication: