A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate - researchr publication authors

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Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen. A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. Microelectronics Reliability, 54(3):582-586, 2014. [doi]

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