Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen. A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. Microelectronics Reliability, 54(3):582-586, 2014. [doi]
@article{XiaCWCJZYS14,
title = {A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate},
author = {Chao Xia and Xinhong Cheng and Zhongjian Wang and Duo Cao and Tingting Jia and Li Zheng and Yuehui Yu and Dashen Shen},
year = {2014},
doi = {10.1016/j.microrel.2013.10.021},
url = {http://dx.doi.org/10.1016/j.microrel.2013.10.021},
researchr = {https://researchr.org/publication/XiaCWCJZYS14},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {54},
number = {3},
pages = {582-586},
}