A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate

Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen. A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. Microelectronics Reliability, 54(3):582-586, 2014. [doi]

Abstract

Abstract is missing.