Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Xintong Xie, Shuxiang Sun, Zhijia Zhao 0005, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo. Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectronics Journal, 144:106091, February 2024. [doi]

This author has not been identified. Look up 'Xintong Xie' in GoogleThis author has not been identified. Look up 'Shuxiang Sun' in GoogleThis author has not been identified. Look up 'Zhijia Zhao 0005' in GoogleThis author has not been identified. Look up 'Pengfei Zhang' in GoogleThis author has not been identified. Look up 'Jie Wei' in GoogleThis author has not been identified. Look up 'Xin Zhou' in GoogleThis author has not been identified. Look up 'Jingyu Shen' in GoogleThis author has not been identified. Look up 'Jinpeng Qiu' in GoogleThis author has not been identified. Look up 'Xiaorong Luo' in Google

runs on WebDSL