Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode

Xintong Xie, Shuxiang Sun, Zhijia Zhao 0005, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo. Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectronics Journal, 144:106091, February 2024. [doi]

@article{XieSZZWZSQL24,
  title = {Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode},
  author = {Xintong Xie and Shuxiang Sun and Zhijia Zhao 0005 and Pengfei Zhang and Jie Wei and Xin Zhou and Jingyu Shen and Jinpeng Qiu and Xiaorong Luo},
  year = {2024},
  month = {February},
  doi = {10.1016/j.mejo.2024.106091},
  url = {https://doi.org/10.1016/j.mejo.2024.106091},
  researchr = {https://researchr.org/publication/XieSZZWZSQL24},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {144},
  pages = {106091},
}