Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories

Yue Xu, Yang Huang. Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories. Microelectronics Reliability, 55(7):1126-1129, 2015. [doi]

Authors

Yue Xu

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Yang Huang

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