Yue Xu, Yang Huang. Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories. Microelectronics Reliability, 55(7):1126-1129, 2015. [doi]
@article{XuH15-1,
title = {Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories},
author = {Yue Xu and Yang Huang},
year = {2015},
doi = {10.1016/j.microrel.2015.04.009},
url = {http://dx.doi.org/10.1016/j.microrel.2015.04.009},
researchr = {https://researchr.org/publication/XuH15-1},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {55},
number = {7},
pages = {1126-1129},
}