A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants - researchr publication authors

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Ziyue Xu 0003, Adam Khalifa, Ankit Mittal, Mehdi Nasrollahpourmotlaghzanjani, Diptashree Das, Marvin Onabajo, Nian Xiang Sun, Sydney S. Cash, Aatmesh Shrivastava. A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants. J. Solid-State Circuits, 57(11):3324-3335, 2022. [doi]

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