A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants

Ziyue Xu 0003, Adam Khalifa, Ankit Mittal, Mehdi Nasrollahpourmotlaghzanjani, Diptashree Das, Marvin Onabajo, Nian Xiang Sun, Sydney S. Cash, Aatmesh Shrivastava. A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants. J. Solid-State Circuits, 57(11):3324-3335, 2022. [doi]

@article{XuKMNDOSCS22,
  title = {A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants},
  author = {Ziyue Xu 0003 and Adam Khalifa and Ankit Mittal and Mehdi Nasrollahpourmotlaghzanjani and Diptashree Das and Marvin Onabajo and Nian Xiang Sun and Sydney S. Cash and Aatmesh Shrivastava},
  year = {2022},
  doi = {10.1109/JSSC.2022.3180633},
  url = {https://doi.org/10.1109/JSSC.2022.3180633},
  researchr = {https://researchr.org/publication/XuKMNDOSCS22},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {57},
  number = {11},
  pages = {3324-3335},
}