Haifeng Xu, Kenneth K. O. A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells. J. Solid-State Circuits, 42(11):2528-2534, 2007. [doi]
@article{XuO07-2,
title = {A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells},
author = {Haifeng Xu and Kenneth K. O},
year = {2007},
doi = {10.1109/JSSC.2007.907201},
url = {https://doi.org/10.1109/JSSC.2007.907201},
researchr = {https://researchr.org/publication/XuO07-2},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {42},
number = {11},
pages = {2528-2534},
}