The following publications are possibly variants of this publication:
- Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensionsCong Li, Yiqi Zhuang, Ru Han, Gang Jin, Junlin Bao. mr, 51(12):2053-2058, 2011. [doi]
- Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETsGuanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu 0001, Tingao Tang. asicon 2011: 555-557 [doi]
- Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETsPeicheng Li, Guangxi Hu, Ran Liu, Tingao Tang. mj, 42(10):1164-1168, 2011. [doi]
- Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETsZunchao Li, Jinpeng Xu, Linlin Liu, Feng Liang, Kuizhi Mei. ieicet, 94-C(6):1120-1126, 2011. [doi]
- Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gate MOSFETCong Li, Yiqi Zhuang, Ru Han, Gang Jin. mr, 54(6-7):1274-1281, 2014. [doi]