Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

W. Xu, Z. Zeng, A. R. Wright, C. Zhang, J. Zhang, T. C. Lu. Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. Microelectronics Journal, 40(4-5):809-811, 2009. [doi]

Abstract

Abstract is missing.