All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs - researchr publication authors

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Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu. All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

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