Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu. All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
@inproceedings{XueRHCBZJSKRL18,
title = {All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs},
author = {Hao Xue and Towhidur Razzak and Seongmo Hwang and Antwon Coleman and Sanyam Bajaj and Yuewei Zhang and Zane Jamal-Eddin and Shahadat Hasan Sohel and Asif Khan and Siddharth Rajan and Wu Lu},
year = {2018},
doi = {10.1109/DRC.2018.8442167},
url = {https://doi.org/10.1109/DRC.2018.8442167},
researchr = {https://researchr.org/publication/XueRHCBZJSKRL18},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
publisher = {IEEE},
isbn = {978-1-5386-3028-0},
}