Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Chang Xue, Yihan Zhang, Peiyu Chen, Mingwei Zhu, Tianqiao Wu, Meng Wu, YanDong He, Le Ye. Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET. In IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022. pages 595-599, IEEE, 2022. [doi]

Abstract

Abstract is missing.