2 16-nm FinFET double pumping 1W1R 2-port SRAM with 313 ps read access time - researchr publication authors

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Makoto Yabuuchi, Yohei Sawada, Toshiaki Sano, Yuichiro Ishii, Shinji Tanaka, Miki Tanaka, Koji Nii. 2 16-nm FinFET double pumping 1W1R 2-port SRAM with 313 ps read access time. In 2016 IEEE Symposium on VLSI Circuits, VLSIC 2016, Honolulu, HI, USA, June 15-17, 2016. pages 1-2, IEEE, 2016. [doi]

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