Kunisato Yamaoka, Shunichi Iwanari, Yasuo Murakuki, Hiroshige Hirano, Masahiko Sakagami, Tetsuji Nakakuma, Takashi Miki, Yasushi Gohou. A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure. J. Solid-State Circuits, 40(1):286-292, 2005. [doi]
@article{YamaokaIMHSNMG05,
title = {A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure},
author = {Kunisato Yamaoka and Shunichi Iwanari and Yasuo Murakuki and Hiroshige Hirano and Masahiko Sakagami and Tetsuji Nakakuma and Takashi Miki and Yasushi Gohou},
year = {2005},
doi = {10.1109/JSSC.2004.837967},
url = {https://doi.org/10.1109/JSSC.2004.837967},
researchr = {https://researchr.org/publication/YamaokaIMHSNMG05},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {40},
number = {1},
pages = {286-292},
}