A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

Kunisato Yamaoka, Shunichi Iwanari, Yasuo Murakuki, Hiroshige Hirano, Masahiko Sakagami, Tetsuji Nakakuma, Takashi Miki, Yasushi Gohou. A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure. J. Solid-State Circuits, 40(1):286-292, 2005. [doi]

Abstract

Abstract is missing.