Masanao Yamaoka, Ryuta Tsuchiya, Takayuki Kawahara. SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors. J. Solid-State Circuits, 41(11):2366-2372, 2006. [doi]
@article{YamaokaTK06,
title = {SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors},
author = {Masanao Yamaoka and Ryuta Tsuchiya and Takayuki Kawahara},
year = {2006},
doi = {10.1109/JSSC.2006.882891},
url = {https://doi.org/10.1109/JSSC.2006.882891},
researchr = {https://researchr.org/publication/YamaokaTK06},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {41},
number = {11},
pages = {2366-2372},
}