SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors

Masanao Yamaoka, Ryuta Tsuchiya, Takayuki Kawahara. SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors. J. Solid-State Circuits, 41(11):2366-2372, 2006. [doi]

Abstract

Abstract is missing.