The following publications are possibly variants of this publication:
- ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky ModulationsShi-Zhe Hong, Shen-Li Chen, Tien-Yu Lan, Yu-Jie Zhou, Zhi-Wei Liu, Jhong-Yi Lai. icce-tw 2021: 1-2 [doi]
- An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSsZhi-Wei Liu, Shen-Li Chen, Jhong-Yi Lai, Xing-Chen Mai, Yu-Jie Chung. icce-tw 2022: 73-74 [doi]
- Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky DevicesShi-Zhe Hong, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Tien-Yu Lan, Yu-Jie Zhou. ickii 2020: 78-79 [doi]
- Design of High-ESD Reliability in HV Power pLDMOS Transistors by the Drain-Side Isolated SCRsShen-Li Chen, Yu-Ting Huang, Yi-Cih Wu. ieicet, 100-C(5):446-452, 2017. [doi]