High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field

Xiaoming Yang, Tianqian Li, Yu Cai, Jun Wang, Changjiang Chen. High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field. IEICE Electronic Express, 10(4):20130057, 2013. [doi]

Abstract

Abstract is missing.