Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung. Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. VLSI Syst., 23(11):2748-2752, 2015. [doi]
Abstract is missing.