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2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes

Jiancheng Yang, Fan Ren, Marko Tadjer, Stephen J. Pearton, Akita Kuramata. 2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

Authors

Jiancheng Yang

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Fan Ren

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Marko Tadjer

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Stephen J. Pearton

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Akita Kuramata

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