Jiancheng Yang, Fan Ren, Marko Tadjer, Stephen J. Pearton, Akita Kuramata. 2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
@inproceedings{YangRTPK18,
title = {2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes},
author = {Jiancheng Yang and Fan Ren and Marko Tadjer and Stephen J. Pearton and Akita Kuramata},
year = {2018},
doi = {10.1109/DRC.2018.8442188},
url = {https://doi.org/10.1109/DRC.2018.8442188},
researchr = {https://researchr.org/publication/YangRTPK18},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
publisher = {IEEE},
isbn = {978-1-5386-3028-0},
}