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Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory

H. G. Yang, Y. Shi, L. Pu, S. L. Gu, B. Shen, P. Han, R. Zhang, Y. D. Zhang. Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory. Microelectronics Journal, 34(1):71-75, 2003. [doi]

Authors

H. G. Yang

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Y. Shi

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L. Pu

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S. L. Gu

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B. Shen

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P. Han

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R. Zhang

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Y. D. Zhang

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