Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures

Chang-Feng Yang, Chun-Yu Wu, Meng-Chun Shih, Ming-Ta Yang, Ming-Han Yang, Yu-Tien Wu, Ta-Chun Chien, Chih-Wei Lai, Shih-Chi Tsai, Wen-Ting Chu, Arthur Hung. Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 318-319, IEEE, 2022. [doi]

Abstract

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