High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors - researchr publication authors

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Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram. High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. In Sixteenth International Symposium on Quality Electronic Design, ISQED 2015, Santa Clara, CA, USA, March 2-4, 2015. pages 10-17, IEEE, 2015. [doi]

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