Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram. High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. In Sixteenth International Symposium on Quality Electronic Design, ISQED 2015, Santa Clara, CA, USA, March 2-4, 2015. pages 10-17, IEEE, 2015. [doi]
@inproceedings{YarmandEAAP15,
title = {High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors},
author = {Roohollah Yarmand and Behzad Ebrahimi and Hassan Afzali-Kusha and Ali Afzali-Kusha and Massoud Pedram},
year = {2015},
doi = {10.1109/ISQED.2015.7085371},
url = {http://dx.doi.org/10.1109/ISQED.2015.7085371},
researchr = {https://researchr.org/publication/YarmandEAAP15},
cites = {0},
citedby = {0},
pages = {10-17},
booktitle = {Sixteenth International Symposium on Quality Electronic Design, ISQED 2015, Santa Clara, CA, USA, March 2-4, 2015},
publisher = {IEEE},
isbn = {978-1-4799-7581-5},
}