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Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices

Chih-Feng Yen, Yu-Ya Huang, Shen-Hao Tsao, Shih-Hao Lin, Chun-Hu Cheng. Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices. In 5th IEEE International Conference on Knowledge Innovation and Invention, ICKII 2022, Hualien, Taiwan, July 22-24, 2022. pages 225-229, IEEE, 2022. [doi]

Authors

Chih-Feng Yen

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Yu-Ya Huang

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Shen-Hao Tsao

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Shih-Hao Lin

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Chun-Hu Cheng

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