Chih-Feng Yen, Yu-Ya Huang, Shen-Hao Tsao, Shih-Hao Lin, Chun-Hu Cheng. Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices. In 5th IEEE International Conference on Knowledge Innovation and Invention, ICKII 2022, Hualien, Taiwan, July 22-24, 2022. pages 225-229, IEEE, 2022. [doi]
@inproceedings{YenHTLC22,
title = {Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices},
author = {Chih-Feng Yen and Yu-Ya Huang and Shen-Hao Tsao and Shih-Hao Lin and Chun-Hu Cheng},
year = {2022},
doi = {10.1109/ICKII55100.2022.9983564},
url = {https://doi.org/10.1109/ICKII55100.2022.9983564},
researchr = {https://researchr.org/publication/YenHTLC22},
cites = {0},
citedby = {0},
pages = {225-229},
booktitle = {5th IEEE International Conference on Knowledge Innovation and Invention, ICKII 2022, Hualien, Taiwan, July 22-24, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7929-5},
}