Yuan Lin Yeoh, Bo Wang, Xiangyao Yu, Tony T. Kim. A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. In 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013. pages 3030-3033, IEEE, 2013. [doi]
Abstract is missing.