Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer

Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang. Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electronic Express, 17(2):20190673, 2020. [doi]

Authors

Bo Yi

This author has not been identified. Look up 'Bo Yi' in Google

Yi Feng Peng

This author has not been identified. Look up 'Yi Feng Peng' in Google

Qing Zhao

This author has not been identified. Look up 'Qing Zhao' in Google

MouFu Kong

This author has not been identified. Look up 'MouFu Kong' in Google

Junji Cheng

This author has not been identified. Look up 'Junji Cheng' in Google

Haimeng Huang

This author has not been identified. Look up 'Haimeng Huang' in Google