Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer

Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang. Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electronic Express, 17(2):20190673, 2020. [doi]

@article{YiPZKCH20,
  title = {Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer},
  author = {Bo Yi and Yi Feng Peng and Qing Zhao and MouFu Kong and Junji Cheng and Haimeng Huang},
  year = {2020},
  doi = {10.1587/elex.16.20190673},
  url = {https://doi.org/10.1587/elex.16.20190673},
  researchr = {https://researchr.org/publication/YiPZKCH20},
  cites = {0},
  citedby = {0},
  journal = {IEICE Electronic Express},
  volume = {17},
  number = {2},
  pages = {20190673},
}