40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU - researchr publication authors

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Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa. 40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU. In Fifteenth International Symposium on Quality Electronic Design, ISQED 2014, Santa Clara, CA, USA, March 3-5, 2014. pages 24-31, IEEE, 2014. [doi]

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