Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa. 40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU. In Fifteenth International Symposium on Quality Electronic Design, ISQED 2014, Santa Clara, CA, USA, March 3-5, 2014. pages 24-31, IEEE, 2014. [doi]
@inproceedings{YokoyamaIKMTASTFNY14,
title = {40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU},
author = {Yoshisato Yokoyama and Yuichiro Ishii and Hidemitsu Kojima and Atsushi Miyanishi and Yoshiki Tsujihashi and Shinobu Asayama and Kazutoshi Shiba and Koji Tanaka and Tatsuya Fukuda and Koji Nii and Kazumasa Yanagisawa},
year = {2014},
doi = {10.1109/ISQED.2014.6783302},
url = {http://dx.doi.org/10.1109/ISQED.2014.6783302},
researchr = {https://researchr.org/publication/YokoyamaIKMTASTFNY14},
cites = {0},
citedby = {0},
pages = {24-31},
booktitle = {Fifteenth International Symposium on Quality Electronic Design, ISQED 2014, Santa Clara, CA, USA, March 3-5, 2014},
publisher = {IEEE},
}