Yoshisato Yokoyama, Miki Tanaka, Koji Tanaka, Masao Morimoto, Makoto Yabuuchi, Yuichiro Ishii, Shinji Tanaka. 2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]
@inproceedings{YokoyamaTTMYIT20,
title = {2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit},
author = {Yoshisato Yokoyama and Miki Tanaka and Koji Tanaka and Masao Morimoto and Makoto Yabuuchi and Yuichiro Ishii and Shinji Tanaka},
year = {2020},
doi = {10.1109/VLSICircuits18222.2020.9162985},
url = {https://doi.org/10.1109/VLSICircuits18222.2020.9162985},
researchr = {https://researchr.org/publication/YokoyamaTTMYIT20},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020},
publisher = {IEEE},
isbn = {978-1-7281-9942-9},
}