Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP

Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won Jun Lee, Beom Seok Lee, Seungyun Lee, Hyejung Choi, Hyung-Dong Lee, Taehoon Kim, Myung Hee Na. Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP. In IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. pages 1-4, IEEE, 2022. [doi]

Authors

Sijung Yoo

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Donghoon Kim

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Yoon Mo Koo

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Sujee Kim Wooju Jeong

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Hyungjoon Shim

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Won Jun Lee

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Beom Seok Lee

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Seungyun Lee

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Hyejung Choi

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Hyung-Dong Lee

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Taehoon Kim

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Myung Hee Na

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