Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won Jun Lee, Beom Seok Lee, Seungyun Lee, Hyejung Choi, Hyung-Dong Lee, Taehoon Kim, Myung Hee Na. Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP. In IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. pages 1-4, IEEE, 2022. [doi]
@inproceedings{YooKKJSLLLCLKN22,
title = {Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP},
author = {Sijung Yoo and Donghoon Kim and Yoon Mo Koo and Sujee Kim Wooju Jeong and Hyungjoon Shim and Won Jun Lee and Beom Seok Lee and Seungyun Lee and Hyejung Choi and Hyung-Dong Lee and Taehoon Kim and Myung Hee Na},
year = {2022},
doi = {10.1109/IMW52921.2022.9779247},
url = {https://doi.org/10.1109/IMW52921.2022.9779247},
researchr = {https://researchr.org/publication/YooKKJSLLLCLKN22},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9947-7},
}