A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection

Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury. A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection. J. Solid-State Circuits, 57(1):68-79, 2022. [doi]

Abstract

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