Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs - researchr publication

researchr

You are not signed in
Sign in
Sign up

Wei-Xiang You, Cheng-yin Wang, Yih Wang, Tsung-Yung Jonathan Chang, Szuya Sandy Liao. Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract is missing.

runs on WebDSL