Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices - researchr publication authors

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Qingkui Yu, Yi Sun, Zheng Li, Bo Mei, Xiaoliang Li, He Lv, Pengwei Li, Min Tang. Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. Microelectronics Reliability, 88:952-956, 2018. [doi]

This author has not been identified. Look up 'Qingkui Yu' in GoogleThis author has not been identified. Look up 'Yi Sun' in GoogleThis author has not been identified. It may be one of the following persons:

Zheng Li

Look up 'Zheng Li' in GoogleThis author has not been identified. Look up 'Bo Mei' in GoogleThis author has not been identified. Look up 'Xiaoliang Li' in GoogleThis author has not been identified. Look up 'He Lv' in GoogleThis author has not been identified. Look up 'Pengwei Li' in GoogleThis author has not been identified. Look up 'Min Tang' in Google

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